Bond chucks having individually-controllable regions, and associated systems and methods

ABSTRACT

A bond chuck having individually-controllable regions, and associated systems and methods are disclosed herein. The bond chuck comprises a plurality of individual regions configured to be individually heated independent of one another. In some embodiments, the individual regions include a first region configured to be heated to a first temperature, and a second region peripheral to the first region and configured to be heated to a second temperature different than the first temperature. In some embodiments, the bond chuck further comprises (a) a first coil disposed within the first region and configured to heat the first region to the first temperature, and (b) a second coil disposed within the second region and configured to heat the second region to the second temperature. The bond chuck can be positioned proximate a substrate of a semiconductor device such that heating the first region and/or second region affect the viscosity of an adhesive used to bond substrates of the semiconductor device to one another. Accordingly, heating the first region and/or the second region can cause the adhesive on the substrate to flow in a lateral, predetermined direction.

CROSS-REFERENCE TO RELATED APPLICATION

This application contains subject matter related to a concurrently-filedU.S. Patent Application, titled “BOND CHUCKS HAVINGINDIVIDUALLY-CONTROLLABLE REGIONS, AND ASSOCIATED SYSTEMS AND METHODS.”The related application, of which the disclosure is incorporated byreference herein, is assigned to Micron Technology, Inc., and isidentified by attorney docket number 010829-9363.US00.

TECHNICAL FIELD

The present patent disclosure generally relates to bond chucks used inthe manufacturing of semiconductor devices, and more particularlyrelates to bond chucks having individually-controllable regions.

BACKGROUND

Semiconductor devices, such as memory chips and microprocessor chips,typically include a semiconductor die bonded to a substrate via abonding material, such as an adhesive. During conventional bondingprocesses, the adhesive is disposed on the substrate, and thesemiconductor die is moved toward the substrate to be bonded thereto.Often, the adhesive has fluid-like properties and is spun onto a centerportion of the substrate. As the semiconductor die moves toward thesubstrate, the adhesive becomes sandwiched between the substrate andsemiconductor die, and is displaced in a lateral direction towardperipheral portions of the substrate. One problem associated with thisconventional bonding process is that the distribution of the adhesive tothe peripheral portions of the substrate is often limited, and thus theadhesive at the center portions of the substrate tends to be thickerthan the adhesive at the peripheral portions of the substrate. As such,thickness of the adhesive can vary significantly across a width of thesubstrate. More specifically, the above-described conventional bondingprocess can often result in a cured adhesive film having a totalthickness variation (TTV) approximately equal to ten percent of theoverall thickness of the adhesive film. As a result, the TTV canincrease the vertical footprint of a semiconductor device. Additionally,the TTV can have undesired effects relating to warpage of thesemiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a top view of a bond chuck in accordance withembodiments of the present technology.

FIG. 1B illustrates a cross-sectional view of the bond chuck shown inFIG. 1A.

FIG. 1C illustrates a cross-sectional view of the bond chuck shown inFIG. 1B after moving individual regions of the bond chuck.

FIG. 2 illustrates a system including a partially-schematic pneumaticsupply operably coupled to the bond chuck shown in FIG. 1C, inaccordance with embodiments of the present technology.

FIGS. 3A-3C illustrate a partially-schematic method of forming asemiconductor device using a bond chuck having individually-controllableregions, in accordance with embodiments of the present technology.

FIG. 4A illustrates a top view of a bond chuck in accordance withembodiments of the present technology.

FIG. 4B illustrates a cross-sectional view of the bond chuck shown inFIG. 4A.

FIG. 5A illustrates a partially-schematic top view of a bond chuckincluding coils, in accordance with embodiments of the presenttechnology.

FIG. 5B illustrates a cross-sectional view of the bond chuck shown inFIG. 5A.

FIGS. 6A-6C illustrate a partially-schematic method of forming asemiconductor device using a bond chuck having individually-controllableregions, in accordance with embodiments of the present technology.

FIG. 7 illustrates a cross-sectional view of a bond chuck includingindividually-movable regions and coils for heating theindividually-movable regions.

FIG. 8 illustrates a system for operating the bond chuck shown in FIG.7.

DETAILED DESCRIPTION

Specific details of several embodiments of the present technologyinclude bond chucks having individually-controllable regions, andassociated systems and methods, as described below with reference to theappended Figures. In several of the embodiments, theindividually-controllable regions can be configured to move relative toone another, and/or be heated independent of one another. As explainedin further detail below, moving the individual regions of the bond chuckand/or heating the individual regions independent of one another canmitigate issues associated with a total thickness variation (TTV) ofadhesive films, as well as warpage of the corresponding semiconductordevices. For example, embodiments of the present technology allowimproved control for more evenly distributing an adhesive across a widthof the substrate, such that TTV of the adhesive is reduced relative toconventional bonding processes.

FIG. 1A illustrates a top view of a bond chuck 100 in accordance withembodiments of the present technology, and FIG. 1B illustrates across-sectional view of the bond chuck 100 shown in FIG. 1A. Referringto FIGS. 1A and 1B together, the bond chuck 100 includes a plurality ofindividual regions, including a first region 105, a second region 110peripheral to (e.g., outwardly of) the first region 105, and a thirdregion 115 peripheral to the second region 110. As shown in theillustrated embodiments, the individual regions are radial, with thesecond region 110 completely surrounding the first region 105, and thethird region completely surrounding the first region 105 and the secondregion 110. In other embodiments (e.g., in non-radial configurations),the second region 110 may only partially surround the first region 105,and the third region 115 may only partially surround the second region110 and/or the first region 105. Furthermore, while the illustratedembodiments are of a bond chuck 100 having three regions, otherembodiments in accordance with the present technology can include lessregions (e.g., two regions) or more regions (e.g., four or fiveregions). The bond chuck 100, including each of the individual first,second and third regions 105, 110, 115, can comprise an electrostaticchuck and be made from a ceramic material or other materials known inthe art.

As explained in additional detail below, the individual regions of thebond chuck 100 can be movable relative to one another in a longitudinaldirection (e.g., a vertical upward direction and/or a vertical downwarddirection). The individual regions can be removably or permanentlyattached to one another such that each individual region is movablerelative to one another. In some embodiments, for example, the bondchuck 100 may include a common portion (e.g., an elongated member)extending through each of the individual regions to keep the individualregions coupled to one another even when moved relative to one another.In some embodiments, an individual region may include a slot extendingalong a portion of a side surface of the particular individual region,and the adjacent region may include a member slidably coupled to theslot. For example, the first region 105 may include a slot along itsside surface, and the second region 110 may include a member at its sidesurface that is slidably attached to the slot of the first region 105.The third region 115 may be slidably attached to the second region 110in a similar manner. In yet other embodiments, the bond chuck 100 mayinclude a flexible plate positioned adjacent (e.g., over) the individualregions and configured to hold the individual regions in place and alsoallow movement therebetween. In addition to or in lieu of the foregoing,the individual regions may be attached to one another using friction.

Referring to FIG. 1B, the bond chuck 100 includes a first outer surface120 a over the first region 105, a second outer surface 120 b over thesecond region 110, and a third outer surface 120 c over the third region115 (collectively referred to as the “outer surface 120”). The outersurface 120 is configured to support a wafer or substrate of asemiconductor device. The outer surface 120 extends across and includesportions of the first, second and third regions 105, 110, 115 of thebond chuck 100. As shown in the illustrated embodiment, the outersurface 120 is generally planar along a plane (P).

FIG. 1C illustrates a cross-sectional view of the bond chuck 100 shownin FIG. 1B after individual regions of the bond chuck 100 have beenmoved. As shown in the illustrated embodiment, the first region 105 hasbeen moved in a longitudinal direction (L) a first distance (D₁) fromits original position shown in FIG. 1B, and the third region 115 hasbeen moved in the longitudinal direction (L) a second distance (D₂)greater than the first distance (D₁). The second region 110 has not beenmoved in the longitudinal direction. As such, the third outer surface120 c extends longitudinally beyond the first outer surface 120 a, whichextends longitudinally beyond the second outer surface 120 b.Accordingly, as shown in the illustrated embodiment, the first, secondand third outer surfaces 120 a, 120 b, 120 c are not aligned or planaralong the plane (P).

As previously described, the first, second and third regions 105, 110and 115 of the bond chuck 100 can be individually movable. Moving theindividual regions can be accomplished via multiple means. For example,the individual regions may be moved using electricity (e.g., an electricmotor), hydraulics, pneumatics, magnets, or combinations thereof. FIG. 2illustrates a system 200 including a pneumatic supply 220 operablycoupled to the bond chuck 100, in accordance with embodiments of thepresent technology. As shown in the illustrated embodiment, the systemincludes (a) the pneumatic supply 220 configured to supply pneumaticfluid (e.g., air), (b) multiple arms operably coupling the pneumaticsupply 220 to individual regions of the bond chuck 100, and (c) acontroller 230 (e.g., a control system) operably coupled to andconfigured to control the pneumatic supply 220 and/or movement of thearms. As shown in the illustrated embodiment, the arms include a firstarm 206 operably coupled to the first region 105 of the bond chuck 100,second arms 211 a, 211 b operably coupled to the second region 110 ofthe bond chuck 100, and third arms 216 a, 216 b operably coupled to thethird region 110 of the bond chuck 100.

The controller 230 may take the form of computer-executableinstructions, including routines executed by a programmable computer.The controller 230 may, for example, also include a combination ofsupervisory control and data acquisition (SCADA) systems, distributedcontrol systems (DCS), programmable logic controllers (PLC), controldevices, and processors configured to process computer-executableinstructions. Those skilled in the relevant art will appreciate that thetechnology can be practiced on computer systems other than thosedescribed herein. The technology can be embodied in a special-purposecomputer or data processor that is specifically programmed, configuredor constructed to perform one or more of the computer-executableinstructions described herein. Information handled by the controller 230can be presented at any suitable display medium, including a CRT displayor LCD.

The controller 230 can receive one or more inputs (e.g., user inputsand/or calculated inputs) and use the inputs to cause the individualregion(s) of the bond chuck 100 to move relative to the other individualregion(s). In some embodiments, for example, the controller 230 cancause the pneumatic supply 220 to exert (a) a first pressure (P₁) on thefirst region 105 of the bond chuck 100, (b) a second pressure (P₂) onthe second region 110 of the bond chuck 100, and (c) a third pressure(P₃) on the third region 115 of the bond chuck 100. The first, secondand third pressures can all be distinct pressures. In a particularexample, upper and lower limits of the first, second and third pressuresmay vary by more than 5 psi, 10 psi, 20 psi or 30 psi. In embodimentswherein the third pressure (P₃) is greater than the first pressure (P₁),and the first pressure (P₁) is greater than the second pressure (P₂),the pneumatic supply will accordingly cause the first region 105 toextend longitudinally beyond the second region 110, and cause the thirdregion 115 to extend longitudinally beyond the first region 105.

In operation, moving the individual regions can affect a shape of asemiconductor device adjacent or proximate (e.g., directly below) thebond chuck. Furthermore, moving the individual regions to differentlongitudinal positions, relative to one another, can affect the shape ofthe semiconductor device in a particular manner such that an adhesive ofthe semiconductor device is displaced in a predetermined or desireddirection.

FIGS. 3A-3C illustrate a partially-schematic method 300 of forming asemiconductor device using a bond chuck having individually-controllableregions, in accordance with embodiments of the present technology.Referring first to FIG. 3A, the method 300 includes providing the bondchuck 100 having individually-controllable regions, including the firstregion 105, the second region 110, and the third region 115, aspreviously described. The bond chuck 100 is positioned over asemiconductor device 320, and the semiconductor device 320 is positionedover another bond chuck or bond head 305. In some embodiments, the bondhead 305 is another bond chuck 100 (e.g., a second bond chuck 100). Thesemiconductor device 320 includes a first substrate 322 (e.g., a devicesubstrate or a device wafer), a second substrate 324 (e.g., a carriersubstrate or a carrier wafer), and an adhesive 326 (e.g., an epoxy)between the first substrate 322 and the second substrate 324. The bondchuck 100 and/or the second substrate 324 are moved in a downward direct(D) such that the first substrate 322 and the second substrate 324sandwich the adhesive 326, causing it be displaced in one or morepredetermined, lateral direction(s).

The first substrate 322 and the second substrate 324 can each include adie, such as silicon, germanium, silicon-germanium alloy, galliumarsenide, gallium nitride or combinations thereof. In some embodiments,the first substrate 322 and the second substrate 324 are eachsemiconductor wafers. In other embodiments, the first substrate 322 andthe second substrate 324 may each be a silicon-on-insulator (SOI)substrate, such as silicon-on-glass (SOG) or silicon-on-sapphire (SOP),or epitaxial layers of semiconductor materials on another substrate. Theconductivity of the substrate, or sub-regions of the substrate, may becontrolled through doping using various chemical species including, butnot limited to, phosphorous, boron, or arsenic. Doping may be performedduring the initial formation or growth of the substrate, byion-implantation, or by any other doping means.

Referring next to FIG. 3B, individual regions of the bond chuck 100 aremoved in the longitudinal direction (L) toward the semiconductor device320. As shown in the illustrated embodiment, the individual regions aremoved to a particular position by exerting a pressure thereon. Forexample, the first pressure (P₁) is exerted on the first region 105, thesecond pressure (P₂) is exerted on the second region 110, and the thirdpressure (P₃) is exerted on the third region 115. As a result, the firstregion 105 is moved to a first position longitudinally beyond a secondposition of the second region 110, and the third region 115 is moved toa third position longitudinally beyond the first position of the firstregion 105. The first, second and third positions of the first, secondand third regions 105, 110, 115, respectively, affect the shape of thesecond substrate 324 and thereby cause the second substrate 324 to forcethe adhesive in a particular direction. As shown in the illustratedembodiment, (a) a first portion of the adhesive 326 below the thirdregion 115 is forced inwardly in a first lateral direction (F1) toward afirst area below the second region 110, (b) a second portion of theadhesive 326 below the first region 105 is forced outwardly in a secondlateral direction (F2) toward the first area below the second region110, (c) a third portion of the adhesive 326 below the first region 105is forced outwardly in a third lateral direction (F3), generallyopposite the second lateral direction (F2), toward a second area belowthe second region 110, and (d) a fourth portion of the adhesive 326below the third region 115 is forced inwardly in a fourth lateraldirection (F4) toward the second area below the second region 110. Indoing so, the adhesive is intentionally and controllably displaced apredetermined manner.

One advantage of embodiments of the present technology is that theindividually-controllable regions can be used to decrease a totalthickness variation (TTV) of the adhesive, which thereby decreases anoverall thickness of the semiconductor device 320. As previouslydescribed, a disadvantage or common issue associated with conventionalmethods of forming semiconductor devices is that adhesives are notevenly distributed across a width of the substrate that the adhesive isdisposed on, and as a result the TTV of the adhesive can be significant.This is at least in part due to the manner in which two substrates arebonded to one another using a liquid adhesive. For example, usingconventional bonding methods, the liquid adhesive is often disposed in acenter portion of a lower substrate, and the bond chuck supporting thelower substrate is spun, thereby forcing the adhesive outwardly towardthe periphery of the lower substrate via centrifugal force. As the bondchuck spins the lower substrate, an upper substrate to be bonded to thelower substrate is brought in contact with the adhesive and also forcesit outwardly toward the periphery of the lower substrate. Despite theseforces, an even distribution of the adhesive across the width of thelower substrate is often not achieved. As a result, the center portionover the lower substrate tends to contain the thickest portion of theadhesive, and the outer portions of the lower substrate tend to containthe thinnest portion. Furthermore, minor deformities in the surfaces ofthe lower and upper substrates in contact with the adhesive can causeadditional thickness variations.

Embodiments of the present technology mitigate these issues by movingthe individual regions of the bond chuck 100 to affect a shape of thesubstrate that more effectively forces the adhesive in predetermineddirections to decrease TTV of the adhesive. For example, in theembodiment illustrated in FIG. 3B, the first outer surface 120 a of thefirst region 105 is longitudinally beyond (i.e., lower than) the secondouter surface 120 b of the second region 110. Accordingly, compared totraditional bond chucks which have a planar surface, the protrudingfirst outer surface 120 a of the first region 105 of the presenttechnology more effectively displaces the adhesive below the firstregion 105 and forces the adhesive outwardly, e.g., in the secondlateral direction (F2) and the third lateral direction (F3). In doingso, the TTV of the adhesive is decreased. It is expected that someembodiments of the present technology can reduce TTV to be approximatelyless than 5%, 4%, 3%, 2%, or 1% of the total thickness of the adhesive.For example, for a cured adhesive film having a thickness of 100microns, utilizing embodiments of the present technology can result inthe TTV for that adhesive being less than 5 microns.

FIG. 3C illustrates the semiconductor device 320 after the adhesive 326has been at least partially distributed between the first and secondsubstrates 322, 324. In some embodiments, the thickness (D₃) of theadhesive can be measured via a sensor 340. Based on the measuredthickness, the first, second and/or third regions 105, 110, 115 may beindividually moved relative to one another to displace the adhesive 326in a particular direction. For example, if the thickness of an outerportion of the adhesive 326 (e.g., under the third region 115) is abovea predetermined threshold or target, the third region 115 may belongitudinally moved toward the adhesive 326, and/or the second region110 may be longitudinally moved away from the adhesive 326, to displaceand cause the adhesive 326 to laterally flow toward a center area belowthe first region 105. Once the desired thickness and/or TTV of theadhesive 326 is achieved, the adhesive 326 may thereafter be cured.

As previously described, several embodiments of the present technologyinclude bond chucks having individually-controllable regions. FIGS.4A-6C generally illustrate bond chucks having individual regions thatcan be individually heated independent of one another. FIG. 4A, forexample, illustrates a top view of a bond chuck 400 in accordance withembodiments of the present technology, and FIG. 4B illustrates across-sectional view of the bond chuck 400 shown in FIG. 4A. Referringto FIGS. 4A and 4B together, the bond chuck 400 includes a plurality ofindividual regions, including a first region 405, a second region 410peripheral to (e.g., outwardly of) the first region 405, and a thirdregion 415 peripheral to the second region 410. As shown in theillustrated embodiments, the bond chuck 400 is radial, and the secondregion 410 completely surrounds the first region 405, and the thirdregion completely surround the first region 405 and the second region410. In other embodiments (e.g., in non-radial configurations), thesecond region 410 may only partially surround the first region 405, andthe third region 415 may only partially surround the second region 410and/or the first region 405. Furthermore, while the illustratedembodiments are of a bond chuck 400 having three regions, otherembodiments in accordance with embodiments of the present technology caninclude less regions (e.g., two regions) or more regions (e.g., four orfive regions). The bond chuck 400, including each of the individualfirst, second and third regions 405, 410, 415, can comprise anelectrostatic chuck and be made from a ceramic material or othermaterials known in the art.

As explained in additional detail below, the individual regions of thebond chuck 400 can be heated independent of one another. For example, insome embodiments the first region 405 is configured to be heated to afirst temperature (T₁) within a first temperature range, the secondregion 410 is configured to be heated to a second temperature (T₂)within a second temperature range, and the third region 415 isconfigured to be heated to a third temperature (T₃) within a thirdtemperature range. The first, second and third temperatures (T₁), (T₂),(T₃) can all be distinct temperatures. The first, second and thirdtemperature ranges may be different or the same. In a particularexample, upper and lower limits of the first, second and thirdtemperatures (T₁), (T₂), (T₃) may vary by more than 10° F., 20° F. or30° F.

The individual regions of the bond chuck 400 can be heated via multiplemeans. For example, the individual regions may be heated usingconvection (e.g., a heating fluid) heating or electricity (e.g., coils).FIG. 5A illustrates a partially-schematic top view of the bond chuck 400including coils for heating individual regions of the bond chuck 400,and FIG. 5B illustrates a cross-sectional view of the bond chuck 400shown in FIG. 5A. Referring to FIGS. 5A and 5B together, the bond chuck400 includes (a) a first coil 525 configured to heat the first region405 to the first temperature, (b) a second coil 530 configured to heatthe second region 410 to the second temperature, and (c) a third coil535 configured to heat the third region 415 to the third temperature. Asshown in the illustrated embodiment, the first, second and third coils525, 530, 535 are each embedded within the first, second and thirdregions 405, 410, 415, respectively, such that no surfaces of the first,second and third coils 525, 530, 535 are exposed through the bond chuck400. In other embodiments, the first, second and/or third coils 525,530, 535 can be arranged at the first, second and third regions 405,410, 415, respectively, such that the first, second and/or third coils525, 530, 535 are at least partially exposed through the bond chuck 400.In some embodiments, the bond chuck 400 can include an air gap orinsulating material between the first, second and third regions 405,410, 415 and/or the first, second and third coils 525, 530, 535. The airgap can help prevent heat dissipation from individual regions toneighboring individual regions. In addition to or in lieu of theforegoing, the bond chuck 400 can include a conductive material (e.g.,Teflon) between the first, second and third regions 405, 410, 415 and/orthe first, second and third coils 525, 530, 535. The conductive materialcan help promote heat dissipation from individual regions to neighboringindividual regions.

Referring to FIG. 5B, a controller 540 can be operably coupled to thefirst, second and/or third coils 525, 530, 535 to control thetemperature to which the first, second and third regions 405, 410, 415,respectively, are heated. The controller 540 can individually heat thefirst, second and third coils 525, 530, 535 independent of one another.Accordingly, the electrical pathway between the controller 540 and thefirst coil 525 can be a first circuit, the electrical pathway betweenthe controller 540 and the second coil 525 can be a second circuitdifferent than the first circuit, and the electrical pathway between thecontroller 540 and the third coil 535 can be a third circuit differentthan the first and second circuits. The controller 540 may be generallysimilar to the controller 230 previously described with reference toFIG. 2, in that the controller 540 may take the form ofcomputer-executable instructions, including routines executed by aprogrammable computer. The controller 540 may, for example, also includea combination of supervisory control and data acquisition (SCADA)systems, distributed control systems (DCS), programmable logiccontrollers (PLC), control devices, and processors configured to processcomputer-executable instructions. Those skilled in the relevant art willappreciate that the technology can be practiced on any known computersystems, and can be embodied in a special-purpose computer or dataprocessor that is specifically programmed, configured or constructed toperform one or more of the computer-executable instructions describedbelow. Information handled by the controller 540 can be presented at anysuitable display medium, including a CRT display or LCD.

FIGS. 6A-6C illustrate a partially-schematic method 600 of forming asemiconductor device using the bond chuck 400 havingindividually-controllable regions, in accordance with embodiments of thepresent technology. Referring first to FIG. 6A, the method 600 includesproviding the bond chuck 400 having individually-controllable regions,including the first region 405, the second region 410, and the thirdregion 415, as previously described. The bond chuck 400 is positionedadjacent (e.g., below) the semiconductor device 320 previously describedwith reference to FIGS. 3A-3C. Another bond chuck or bond head 305, aspreviously described with reference to FIGS. 3A-3C, is positioned overthe semiconductor device 320. In some embodiments, the bond head 305 canbe the bond chuck 400 (e.g., a second bond chuck 400). The semiconductordevice 320 includes the first substrate 322 (e.g., a device substrate ora device wafer), the second substrate 324 (e.g., a carrier substrate ora carrier wafer), and the adhesive or epoxy 326 between the firstsubstrate 322 and the second substrate 324. The bond chuck 100 and/orthe second substrate 324 are moved in a downward direct (D) such thatthe first substrate 322 and the second substrate 324 sandwich theadhesive 326, causing it be displaced in one or more predetermineddirection(s).

Referring next to FIG. 6B, the individual regions of the bond chuck 400are heated independent of one another, e.g., via the controller 540(FIG. 5B). For example, the first region 405 is heated to the firsttemperature (T₁) via the first coil 525, the second region 410 is heatedto the second temperature (T₂), less than the first temperature (T₁),via the second coil 530, and the third region 415 is heated to the thirdtemperature (T₃), greater than the first temperature (T₁), via the thirdcoil 535. The first, second and third temperatures (T₁), (T₂), (T₃) heatthe corresponding regions of the first substrate 322, which heats thecorresponding regions of the adhesive 326. As shown in the illustratedembodiment, heating the first region 405 to the first temperature (T₁)causes the corresponding region of the adhesive 326 to be heated to afourth temperature (T₄) slightly less than the first temperature (T₁),heating the second region 410 to the second temperature (T₂) causes thecorresponding region of the adhesive 326 to be heated to a fifthtemperature (T₅) slightly less than the second temperature (T₂), andheating the third region 415 to the third temperature (T₃) causes thecorresponding region of the adhesive 326 to be heated to a sixthtemperature (T₆) slightly less than the third temperature (T₃). Thetemperature of the adhesive 326 affects the viscosity of the adhesive326, with a higher temperature corresponding to a lower viscosity.Furthermore, the viscosity affects the flowability of the adhesive 326,with a higher viscosity corresponding to less flowability. As such, ifthe fourth temperature (T₄) is greater than the fifth temperature (T₅)and less than the sixth temperature (T₆), the viscosity of the adhesive326 varies across a width of the first substrate 322. Furthermore, theflowability also varies across the width of the first substrate 322,with the flowability being highest over the third region 415 and lowestover the second region 410.

The individual regions of the bond chuck 400 can be heated to cause theadhesive to flow in a particular, predetermined direction. For example,depending on the adhesive, thickness of the overall semiconductor device320, and/or adhesive disposition process, the individual regions can beindividually heated to form the semiconductor device 320 having aminimal TTV. In some embodiments, the individual regions may be heatedbased on a profile of the semiconductor device 320 being formed, withthe profile being based on data for previous devices using at least oneof the same first substrate 322, second substrate 324 or adhesive 326.

As shown in the illustrated embodiment, the portion of the adhesivecorresponding to the fourth temperature (T₄) has a lower viscosity thanthe portion of the adhesive corresponding to the fifth temperature (T₅).Accordingly, the portion of the adhesive over the first region 405 andcorresponding to the fourth temperature (T₄) would therefore be urgedoutward in the second lateral direction (F₂) and third lateral direction(F₃) toward the portion of the adhesive over the second region 410 andcorresponding to the fifth temperature (T₅). As also shown in theillustrated embodiment, the portion of the adhesive corresponding to thesixth temperature (T₆) has a lower viscosity than the portion of theadhesive corresponding to the fifth temperature (T₅). Accordingly, theportion of the adhesive over the third region 415 and corresponding tothe sixth temperature (T₆) would therefore be urged inward in the firstlateral direction (F₁) and fourth lateral direction (F₄) toward theportion of the adhesive over the second region 410 and corresponding tothe fifth temperature (T₅).

As previously mentioned, an advantage of embodiments of the presenttechnology is that the individually-controllable regions can be used todecrease a total thickness variation (TTV) of the adhesive, whichdecreases an overall thickness of the semiconductor device 320. Heatingthe individual regions of the bond chuck 400 affects the flowability ofthe adhesive, and can be used to more effectively force the adhesive toflow in a predetermined direction, relative to conventional processespreviously described. For example, if an outer portion of the adhesive326 (e.g., over the third region 415) has a thickness above apredetermined threshold or target, the third region 415 may be heated toa temperature sufficient to cause the adhesive 326 over the third region415 to laterally flow toward a center area below the first region 405.Once the desired TTV of the adhesive is achieved, the adhesive 326 canbe cured.

Another advantage of some embodiments of the present technology is thatwarpage of the semiconductor device 320 can be mitigated and/or moreeffectively controlled. In conventional methods of forming semiconductordevices, the bond chucks are uniformly heated to a single temperature,and thus the adhesive is cured at the single temperature. If theadhesive includes portions that are thicker than others, thesemiconductor device will experience warpage. Embodiments of the presenttechnology mitigate this issue because the temperature of individualregions of the bond chuck 400 can be individually controlled, thusallowing the adhesive to more evenly distribute across a width of thesubstrate. Accordingly, the thicker portions of adhesive formed whenusing the conventional methods are avoided, and warpage of thesemiconductor device is mitigated. Furthermore, warpage is furthermitigated by embodiments of the present technology in that theindividual regions heated to different temperatures allow the adhesiveadjacent the individual regions to be cured at different rates.

FIG. 6C illustrates the semiconductor device 320 after the adhesive 326has been at least partially distributed between the first and secondsubstrates 322, 324. In some embodiments, the thickness (D₄) of theadhesive can be measured via the sensor 340 previously described withreference to FIG. 3C. Based on the measured thickness (D₄), the first,second and/or third regions 405, 410, 420 may be individually heated tocause the adhesive to flow in a particular direction based on itsviscosity.

FIG. 7A illustrates a partially-schematic cross-sectional view of a bondchuck 700 including individually-movable regions and coils for heatingthe individually-movable regions. As shown in the illustratedembodiment, the bond chuck 700 includes a first region 705 having thefirst coil 525, a second region 710 at least partially peripheral to thefirst region 705 and having the second coil 530, and a third region 715at least partially peripheral to the second region 710 and having thethird coil 535. The first region 705 extends beyond the plane (P) in alongitudinal direction (L) to a first position, the second region 710extends to the plane (P) to a second position, and the third region 715extends in the longitudinal direction (L) beyond the plane (P) and thefirst region 705 to a third position. The individual regions of the bondchuck 700 can be individually heated and moved relative to one another.Accordingly, the bond chuck 700 can be used to affect an adhesive fluidand decrease TTV thereof, as previously described.

FIG. 8 illustrates a system 800 including the bond chuck 700. As shownin the illustrated embodiment, the system includes the pneumatic supply220 for controlling movement of individual regions of the bond chuck700, and a controller 830 be operably coupled to the pneumatic supply220 and the first, second and third coils 525, 530, 535. The controller830 can include features generally similar to those previously describedfor the controller 230 (FIG. 2) and the controller 540 (FIG. 5B).Accordingly, the controller 830 is configured to control movement andheating of the individual regions of the bond chuck 700. In operation,the system 800 is configured to control the relatively even distributionof adhesive for forming semiconductor devices with improved TTV.

The functions described herein may be implemented in hardware, softwareexecuted by a processor, firmware, or any combination thereof. Otherexamples and implementations are within the scope of the disclosure andappended claims. Features implementing functions may also be physicallylocated at various positions, including being distributed such thatportions of functions are implemented at different physical locations.

As used herein, including in the claims, “or” as used in a list of items(for example, a list of items prefaced by a phrase such as “at least oneof” or “one or more of”) indicates an inclusive list such that, forexample, a list of at least one of A, B, or C means A or B or C or AB orAC or BC or ABC (i.e., A and B and C). Also, as used herein, the phrase“based on” shall not be construed as a reference to a closed set ofconditions. For example, an exemplary step that is described as “basedon condition A” may be based on both a condition A and a condition Bwithout departing from the scope of the present disclosure. In otherwords, as used herein, the phrase “based on” shall be construed in thesame manner as the phrase “based at least in part on.”

As used herein, the terms “vertical,” “horizontal,” “lateral,” “upper,”“lower,” “above,” and “below” can refer to relative directions orpositions of features in the semiconductor devices in view of theorientation shown in the Figures. For example, “upper” or “uppermost”can refer to a feature positioned closer to the top of a page thananother feature. These terms, however, should be construed broadly toinclude semiconductor devices having other orientations, such asinverted or inclined orientations where top/bottom, over/under,above/below, up/down, and left/right can be interchanged depending onthe orientation.

From the foregoing, it will be appreciated that specific embodiments ofthe invention have been described herein for purposes of illustration,but that various modifications may be made without deviating from thescope of the invention. For example, Rather, in the foregoingdescription, numerous specific details are discussed to provide athorough and enabling description for embodiments of the presenttechnology. One skilled in the relevant art, however, will recognizethat the disclosure can be practiced without one or more of the specificdetails. In other instances, well-known structures or operations oftenassociated with memory systems and devices are not shown, or are notdescribed in detail, to avoid obscuring other aspects of the technology.In general, it should be understood that various other devices, systems,and methods in addition to those specific embodiments disclosed hereinmay be within the scope of the present technology.

1. A system for manufacturing semiconductor devices, comprising: a chuckhaving a plurality of regions including a first region, and a secondregion peripheral to the first region; and a controller havinginstructions that, when executed, cause (a) the first region to beheated to a first temperature, and (b) the second region to be heated toa second temperature different than the first temperature.
 2. The systemof claim 1 wherein the chuck further comprises (a) a first coil disposedwithin the first region and configured to heat the first region to thefirst temperature, and (b) a second coil disposed within the secondregion and configured to heat the second region to the secondtemperature, and wherein the controller is in electrical communicationwith the first coil and the second coil.
 3. The system of claim 2,further comprising a first circuit associated with the first coil and asecond circuit associated with the second coil, wherein the controlleris in electrical communication with the first coil via the first circuitand the second coil via the second circuit.
 4. The system of claim 2wherein: the plurality of regions further comprises a third regionperipheral to the second region, and the chuck further comprises a thirdcoil disposed within the third region and configured to heat the thirdregion to a third temperature different than the first temperature andthe second temperature.
 5. The system of claim 1 wherein the pluralityof regions further comprises a third region peripheral to the secondregion, wherein the instructions, when executed, cause the third regionto be heated to a third temperature different than the first temperatureand the second temperature.
 6. The system of claim 1 wherein the firsttemperature and the second temperature are within a temperature range offrom about 5° F. to 20° F.
 7. The system of claim 1 wherein at least oneof the first region or the second region is movable relative to theother in a longitudinal direction.
 8. A tool for use in manufacturingsemiconductor devices, comprising: a first region; a first coil disposedwithin the first region and configured to heat the first region to afirst temperature; a second region adjacent the first region; and asecond coil disposed within the second region and configured to heat thesecond region to a second temperature different than the firsttemperature.
 9. The tool of claim 8 wherein the tool includes an outercontinuous surface that includes the first region and the second region.10. The tool of claim 8 wherein the second region is peripheral to andentirely surrounds the first region.
 11. The tool of claim 8, furthercomprising: a third region adjacent the second region; and a third coildisposed within the third region and configured to heat the third regionto a third temperature different than at least one of the firsttemperature or the second temperature.
 12. The tool of claim 11 whereinthe third region is peripheral to and entirely surrounds the secondregion.
 13. A method for bonding semiconductor devices, comprising:providing a chuck having multiple regions including a first region and asecond region at least partially surrounding the first region; heatingthe first region to a first temperature; and heating the second regionto a second temperature different than the first temperature.
 14. Themethod of claim 13 wherein: the chuck includes (a) a first coil disposedat least partially within the first region and comprising a firstcircuit, and (b) a second coil disposed at least partially within thesecond region and comprising a second circuit, heating the first regionincludes heating the first coil to the first temperature, and heatingthe second region includes heating the second coil to the secondtemperature.
 15. The method of claim 14 wherein heating the first regionand heating the second region are done via a controller, the controllerbeing in electrical communication with the first coil via the firstcircuit and with the second coil via the second circuit.
 16. The methodof claim 13 wherein the multiple regions include a third region at leastpartially surrounding the second region, the method further comprisingheating the third region to a third temperature different than at leastone of the first temperature or the second temperature.
 17. The methodof claim 13, further comprising: positioning the chuck over asemiconductor device comprising a first substrate, a second substrate,and an adhesive between the first substrate and the second substrate;wherein— the first region is over a first area of the first substrateand the second region is over a second area of the first substrate,heating the first region of the chuck includes heating a first portionof the adhesive, via the first area, to a third temperature associatedwith the first temperature, and heating the second region of the chuckincludes heating a second portion of the adhesive, via the second area,to a fourth temperature associated with the second temperature.
 18. Themethod of claim 17, further comprising: curing the first portion of theadhesive at a first rate; and curing the second portion of the adhesiveat a second rate different than the first rate.
 19. The method of claim17, further comprising: after heating the first region and the secondregion, measuring a thickness of the adhesive between the firstsubstrate and the second substrate, and heating at least one of thefirst region or the second region based on the measured thickness. 20.The method of claim 17 wherein heating the first region and heating thesecond region is done via a controller, the method further comprising:inputting to the controller one or more parameter(s), wherein theparameters are based at least in part on characteristics of at least oneof the first substrate, the adhesive, or the second substrate, whereinheating the first region is based on the inputted one or moreparameter(s).